Accurate Small-Signal Modeling of FD-SOI MOSFETs
نویسندگان
چکیده
A new small-signal model for fully depleted silicon-oninsulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range from 0.2 GHz to 20 GHz. key words: FD-SOI, MOSFET, RF, modeling, non-quasi-static
منابع مشابه
HiSIM-SOI: SOI-MOSFET Model for Circuit Simulation Valid also for Device Optimization
Circuit simulation model for advanced SOI-MOSFETs has been developed by solving Poisson’s equation consistently. It is successfully proven that, as a result of solving the Poisson’s equation considering its device structure, our model is applicable for various variations of SOI-MOSFETs such as partially depleted (PD), fully depleted (FD) and dynamically depleted SOI-MOSFETs, which is the indisp...
متن کاملA Small-Signal Analysis Based Thermal Noise Modeling Method for RF SOI MOSFETs
We investigate thermal noise mechanisms and present analytical expressions of the noise power spectral density at high frequencies (HF) in Silicon-on-insulator (SOI) MOSFETs. The developed HF noise model of RF T-gate body contact (TB) SOI MOSFET for 0.13-μm SOI CMOS technology accounts for the mechanisms of 1) channel thermal noise; 2) induced gate noise; 3) substrate resistance noise and 4) ga...
متن کاملDrain current response delay of FD-SOI MOSFETs in RF operation
We investigated the frequency dependences of Y22 of FDSOI MOSFETs, in which the drain current response delay is observed for the first time. Short channel FD-SOI devices operating in linear region show significant drain current response delay. It is confirmed that FD-SOI MOSFET’s RF behavior can be well reproduced with the proposed model including the drain current response delay.
متن کاملPerformance evaluation of FD-SOI Mosfets for different metal gate work function
FULLY DEPLETED (FD) SILICON ON INSULATOR (SOI) METAL OXIDE FIELD EFFECT TRANSISTOR (MOSFET) IS THE LEADING CONTENDER FOR SUB 65NM REGIME. THIS PAPER PRESENTS A STUDY OF EFFECTS OF WORK FUNCTIONS OF METAL GATE ON THE PERFORMANCE OF FD-SOI MOSFET. SENTAURUS TCAD SIMULATION TOOL IS USED TO INVESTIGATE THE EFFECT OF WORK FUNCTION OF GATES ON THE PERFORMANCE FD-SOI MOSFET. SPECIFIC CHANNEL LENGTH OF...
متن کاملDevice Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations
The device design of future nanoscale MOSFETs is reviewed. Major challenges in the design of the nanometer MOSFETs and the possible solutions are discussed. In this paper, special emphasis is placed on the combination of new transistor structures that suppress the short channel effect and on back-gate voltage control that suppresses the characteristics variations. Two new device architectures, ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- IEICE Transactions
دوره 89-C شماره
صفحات -
تاریخ انتشار 2006